Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs. - Yiming Qu; Ran Cheng; Wei Liu 287; Junkang Li; Bich-Yen Nguyen; Olivier Faynot; Nuo Xu; Bing Chen; Yi Zhao 015 (IRPS, 2018)

Sub-1 ns characterization methodology for transistor electrical parameter extraction. - Yiming Qu; Bing Chen; Wei Liu 287; Jinghui Han; Jiwu Lu; Yi Zhao 015 (Microelectron. Reliab., 2018)

Nanosecond-scale and self-heating free characterization of advanced CMOS transistors utilizing wave reflection. - Wei Liu 287; Yaru Ding; Liang Zhao; Yi Zhao 015 (IRPS, 2021)

Degradation Behaviors of 22 nm FDSOI CMOS Inverter Under Gigahertz AC Stress. - Yaru Ding; Wei Liu 287; Yiming Qu; Liang Zhao; Yi Zhao 015 (IRPS, 2022)