Compact Measurement Schemes for Bit-Line Swing, Sense Amplifier Offset Voltage, and Word-Line Pulse Width to Characterize Sensing Tolerance Margin in a 40 nm Fully Functional Embedded SRAM. - Yen-Huei Chen; Shao-Yu Chou; Quincy Li; Wei-Min Chan; Dar Sun; Hung-Jen Liao; Ping Wang; Meng-Fan Chang; Hiroyuki Yamauchi (IEEE J. Solid State Circuits, 2012)

A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications. - Jonathan Chang; Yen-Huei Chen; Hank Cheng; Wei-Min Chan; Hung-Jen Liao; Quincy Li; Stanley Chang; Sreedhar Natarajan; Robin Lee; Ping-Wei Wang; Shyue-Shyh Lin; Chung-Cheng Wu; et al. (ISSCC, 2013)

13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. - Yen-Huei Chen; Wei-Min Chan; Wei-Cheng Wu; Hung-Jen Liao; Kuo-Hua Pan; Jhon-Jhy Liaw; Tang-Hsuan Chung; Quincy Li; George H. Chang; Chih-Yung Lin; Mu-Chi Chiang; Shien-Yang Wu; et al. (ISSCC, 2014)

A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications. - Yen-Huei Chen; Wei-Min Chan; Wei-Cheng Wu; Hung-Jen Liao; Kuo-Hua Pan; Jhon-Jhy Liaw; Tang-Hsuan Chung; Quincy Li; Chih-Yung Lin; Mu-Chi Chiang; Shien-Yang Wu; Jonathan Chang (IEEE J. Solid State Circuits, 2015)

A 16nm dual-port SRAM with partial suppressed word-line, dummy read recovery and negative bit-line circuitries for low VMIN applications. - Yen-Huei Chen; Kao-Cheng Lin; Ching-Wei Wu; Wei-Min Chan; Jhon-Jhy Liaw; Hung-Jen Liao; Jonathan Chang (VLSI Circuits, 2016)

12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. - Jonathan Chang; Yen-Huei Chen; Wei-Min Chan; Sahil Preet Singh; Hank Cheng; Hidehiro Fujiwara; Jih-Yu Lin; Kao-Cheng Lin; John Hung; Robin Lee; Hung-Jen Liao; Jhon-Jhy Liaw; et al. (ISSCC, 2017)

A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications. - Tsung-Yung Jonathan Chang; Yen-Huei Chen; Wei-Min Chan; Hank Cheng; Po-Sheng Wang; Yangsyu Lin; Hidehiro Fujiwara; Robin Lee; Hung-Jen Liao; Ping-Wei Wang; Geoffrey Yeap; Quincy Li (IEEE J. Solid State Circuits, 2021)