Engineering HZO by Flat Amorphous TiN with 0.3nm Roughness Achieving Uniform c-Axis Alignment, Record High Breakdown Field ( 10nm HZO), and Record Final 2Pr of 56 μC/cm2 with Endurance > 4E12. - Zefu Zhao; Yu-Rui Chen; Yu-Tsung Liao; Yun-Wen Chen; Wan-Hsuan Hsieh; Jer-Fu Wang; Yu-An Chen; Hao-Yi Lu; Wei-Teng Hsu; Dai-Ying Lee; Ming-Hsiu Lee; C. W. Liu (VLSI Technology and Circuits, 2024)

RF Performance Benchmark of Nanosheets, Nanowires, FinFETs, and TreeFETs. - Hsin-Cheng Lin; Wei-Teng Hsu; Tsai-Yu Chung; He-Wen Shen; Ching-Wang Yao; Tao Chou; Li-Kai Wang; Chee Wee Liu (IEEE Access, 2024)