A hybrid memory cell using Single-Electron transfer. - Wei Wei 034; Jie Han 001; Fabrizio Lombardi (NANOARCH, 2011)

Modeling a single electron turnstile in HSPICE. - Fabrizio Lombardi; Wei Wei 034; Jie Han 001 (ACM Great Lakes Symposium on VLSI, 2012)

Extending Non-Volatile Operation to DRAM Cells. - Wei Wei 034; Kazuteru Namba; Fabrizio Lombardi (IEEE Access, 2013)

Designs and analysis of non-volatile memory cells for single event upset (SEU) tolerance. - Wei Wei 034; Fabrizio Lombardi; Kazuteru Namba (DFT, 2014)

New 4T-based DRAM cell designs. - Wei Wei 034; Kazuteru Namba; Fabrizio Lombardi (ACM Great Lakes Symposium on VLSI, 2014)

Robust HSPICE modeling of a single electron turnstile. - Wei Wei 034; Jie Han 001; Fabrizio Lombardi (Microelectron. J., 2014)

Novel Designs of Embedded Hybrid Cells for High Performance Memory Circuits. - Fabrizio Lombardi; Wei Wei 034; Kazuteru Namba (ACM Great Lakes Symposium on VLSI, 2015)

Design and Comparative Evaluation of a Hybrid Cache Memory at Architectural Level. - Wei Wei 034; Kazuteru Namba; Fabrizio Lombardi (ACM Great Lakes Symposium on VLSI, 2016)

A Novel Scheme for Tolerating Single Event/Multiple Bit Upsets (SEU/MBU) in Non-Volatile Memories. - Wei Wei 034; Kazuteru Namba; Yong-Bin Kim; Fabrizio Lombardi (IEEE Trans. Computers, 2016)