Estimation of Drain-Induced Barrier Lowering Variation Due to Random Dopant Fluctuation Effect in Nanometer MOSFETs by Gamma Distribution. - Weifeng Lyu; Ying Han; Caiyun Zhang; Weijie Wei 002; Dengke Chen (CECNet, 2023)

Optimization of negative capacitance junctionless gate-all-around field-effect transistor using asymmetric non-local lateral Gaussian doping. - Ying Han; Weifeng Lü; Weijie Wei 002; Caiyun Zhang; Dengke Chen (Microelectron. J., 2023)

A novel recessed-source negative capacitance gate-all-around tunneling field effect transistor for low-power applications. - Weijie Wei 002; Weifeng Lü; Ying Han; Caiyun Zhang; Dengke Chen (Microelectron. J., 2024)