Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit. - Jiali Huo; Weixing Huang; Fan Zhang; Shengli Zhang; Weizhuo Gan; Qiang Huo; Yuwei Cai; Qingzhu Zhang; Yongliang Li; Huilong Zhu; Huaxiang Yin; Zhenhua Wu (Microelectron. J., 2021)

Prediction of Key Metrics of Stacked Nanosheet nFETs using Genetic Algorithm-based Neural Networks. - Haoqing Xu; Weizhuo Gan; Lei Cao; Huaxiang Yin; Zhenhua Wu (ICTA, 2022)

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing. - Zhaohao Zhang; Guohui Zhan; Weizhuo Gan; Yan Cheng; Xumeng Zhang; Yue Peng; Jianshi Tang; Fan Zhang; Jiali Huo; Gaobo Xu; Qingzhu Zhang; Zhenhua Wu; et al. (Adv. Intell. Syst., 2023)

Investigation on dependency of thermal characteristics on gate/drain bias voltages in stacked nanosheet transistors. - Peng Zhao; Lei Cao; Fan Zhang; Haoqing Xu; Weizhuo Gan; Qingzhu Zhang; Zhaohao Zhang; Jiaxin Yao; Guoliang Tian; Kun Luo; Zhenhua Wu; Huaxiang Yin (Microelectron. J., 2023)