Forming-free, Uniform, and Multi-level Resistive Switching in W/AlOxNy/Al2O3/Pt Memristor by Nitrogen Annealing Strategy. - Yi-Bai Xue; Shengguang Ren; Yu Zhang; Wen-Bin Zuo; Yi Li 049; Xiangshui Miao (ICTA, 2024)