An investigation of surface state capture cross-sections for metal-oxide-semiconductor field-effect transistors using HfO2 gate dielectrics. - Fu-Chien Chiu; Wen-Chieh Shih; Joseph Ya-min Lee; Huey-Liang Hwang (Microelectron. Reliab., 2007)

The characterization of retention properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3, Y2O3)-semiconductor devices. - Yu-Di Su; Wen-Chieh Shih; Joseph Ya-min Lee (Microelectron. Reliab., 2007)