SiO2 tunneling and Si3N4/HfO2 trapping layers formed with low temperature processes on gate-all-around junctionless charge-trapping flash memory devices. - Hsin-Kai Fang; Kuei-Shu Chang-Liao; Chia-Hsin Cheng; Po-Yao Lin; Wen-Hsien Huang; Chang-Hong Shen; Jia-Min Shieh (Microelectron. Reliab., 2018)