A scaleable model for STI mechanical stress effect on layout dependence of MOS electrical characteristics. - Ke-Wei Su; Yi-Ming Sheu; Chung-Kai Lin; Sheng-Jier Yang; Wen-Jya Liang; Xuemei Xi; Chung-Shi Chiang; Jaw-Kang Her; Yu-Tai Chia; Carlos H. Diaz; Chenming Hu (CICC, 2003)