Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode With and Without Recessed Anode. - Qinglei Bu; Yutao Cai; Miao Cui; Huiqing Wen; Wen Liu 010 (ICICDT, 2019)

Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. - Yutao Cai; Yang Wang; Miao Cui; Wen Liu 010; Huiqing Wen; Cezhou Zhao; Ivona Z. Mitrovic; Stephen Taylor; Paul R. Chalker (ICICDT, 2019)

Design of GaN-based Voltage Reference Circuit for a Wide-Temperature-Range Operation. - Xudong Chen; Huiqing Wen; Qinglei Bu; Wen Liu 010 (ICICDT, 2019)

The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. - Miao Cui; Yutao Cai; Qinglei Bu; Wen Liu 010; Huiqing Wen; Ivona Z. Mitrovic; Stephen Taylor; Paul R. Chalker; Cezhou Zhao (ICICDT, 2019)

Design and Evaluation of GaN-based Over-Temperature Protection Circuit. - Lei Kang; Huiqing Wen; Qinglei Bu; Wen Liu 010 (ICICDT, 2019)

Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator. - Bangbo Sun; Huiqing Wen; Qingling Bu; Wen Liu 010 (ICICDT, 2019)

Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters. - Miao Cui; Ruize Sun; Qinglei Bu; Wen Liu 010; Huiqing Wen; Ang Li; Yung C. Liang; Cezhou Zhao (IEEE Access, 2019)

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. - Yutao Cai; Yang Wang; Ye Liang; Yuanlei Zhang; Wen Liu 010; Huiqing Wen; Ivona Z. Mitrovic; Cezhou Zhao (IEEE Access, 2020)

Stability Analysis of Monolithic GaN MIS-HEMT Comparator with Device PBTI and Circuit Stress Tests. - Ang Li; Yi Shen; Ziqian Li; Yuhao Zhu 004; Huiqing Wen; Wen Liu 010 (ASICON, 2021)

Threshold Voltage Instability in D-mode AlGaN/GaN MIS-HEMTs with Al2O3 Gate Dielectric. - Ye Liang; Yuanlei Zhang; Yutao Cai; Zhaoyi Wang; Yinchao Zhao; Huiqing Wen; Wen Liu 010 (ICICDT, 2021)

Monolithic DFF-NAND and DFF-NOR logic circuits based on GaN MIS-HEMT. - Yuhao Zhu 004; Miao Cui; Ang Li; Fan Li; Huiqing Wen; Wen Liu 010 (ICICDT, 2021)

Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer. - Jiachen Duan; Yuanlei Zhang; Ye Liang; Yutao Cai; Wen Liu 010 (ICICDT, 2022)

The Investigation of Source Field Plate on the Performance of pGaN Gate Device and Dual-Gate Bidirectional Switch using TCAD Simulation. - Xuan Chi; Yubo Wang; Fan Li; Yixiao Huang 005; Chenruiyuan Yu; Shiqiang Wu; Huiqing Wen; Jiangmin Gu; Ping Zhang; Wen Liu 010 (ICICDT, 2023)

Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters. - Junzhe Tan; Dongyi Yang; Shiqiang Wu; Yuhao Zhu 004; Yaoyao Pan; Pengju Cui; Wen Liu 010 (ICICDT, 2023)

The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs. - Shiqiang Wu; Fan Li; Yuhao Zhu 004; Yixiao Huang 005; Chenruiyuan Yu; Yubo Wang; Xuan Chi; Huiqing Wen; Wen Liu 010 (ICICDT, 2023)

Physics-Based Small-Signal Model of Ga2O3 Hot-Electron Transistor. - Roupu Zhu; Chengwei Liu; Yuhao Zhu 004; Wen Liu 010; Yi Pei; Man Hoi Wong (ICICDT, 2023)