Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? - Carlton M. Osburn; Indong Kim; Sungkee Han; Indranil De; Kam F. Yee; Shyam Gannavaram; Sung-Joo Lee; Chung-Ho Lee; Zhijiong J. Luo; Wenjuan Zhu 002; John R. Hauser; Dim-Lee Kwong; et al. (IBM J. Res. Dev., 2002)

Ferroelectric Aluminum-Doped Hafnium Oxide for Memory Applications. - Hojoon Ryu; Kai Xu; Ji Guo; Wenjuan Zhu 002 (DRC, 2018)

HetCore: TFET-CMOS Hetero-Device Architecture for CPUs and GPUs. - Bhargava Gopireddy; Dimitrios Skarlatos 002; Wenjuan Zhu 002; Josep Torrellas (ISCA, 2018)

Ferroelectric Tunneling Junctions for Neurosynaptic Computing. - Hojoon Ryu; Haonan Wu; Fubo Rao; Wenjuan Zhu 002 (DRC, 2019)

Nanoscale Devices Based on Two-dimensional and Ferroelectric Materials. - Zijing Zhao 006; Kai Xu; Jialun Liu; Wei Jiang; Hojoon Ryu; Shaloo Rakheja; Tony Low; Wenjuan Zhu 002 (DRC, 2022)

Modeling of Content addressable memory using 2D Reconfigurable Transistors. - Ashwin Tunga; Junzhe Kang; Ziing Zhao; Ankit Shukla 002; Wenjuan Zhu 002; Shaloo Rakheja (DRC, 2024)