A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances. - Zheng Wu; Chao Xia; Bo Yi; Junji Cheng; Haimeng Huang; Moufu Kong; Hongqiang Yang; Wenkun Shi (ASICON, 2021)

Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction. - Bo Yi; Haimeng Huang; Haoran Hu; MouFu Kong; Yilin Guo; Wenkun Shi; Junji Cheng; Hongqiang Yang (ASICON, 2023)