A Fluctuation Model of a Hf02 RRAM Cell for Memory Circuit Designs. - Feng Zhang 014; Linan Li; Qiang Huo; Cong Fang 002; Wenqiang Ba (SMACD, 2019)

A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism. - Linan Li; Wenqiang Ba; Wei Wang 209; Ling Li 013; Guangwei Xu; Lingfei Wang; Zhuoyu Ji; Congyan Lu; Writam Banerjee (Microelectron. J., 2019)