1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes. - Wenshen Li; Kazuki Nomoto; Zongyang Hu; Nicholas Tanen; Kohei Sasaki; Akito Kuramata; Debdeep Jena; Huili Grace Xing (DRC, 2018)

Degradation of GaN-on-GaN vertical diodes submitted to high current stress. - Eric E. Fabris; Matteo Meneghini; Carlo De Santi; Zongyang Hu; Wenshen Li; Kazuki Nomoto; Debdeep Jena; Huili Grace Xing; Xiang Gao; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2018)

Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier Diodes. - Wenshen Li; Kazuki Nornoto; Zongyang Hu; Debdeep Jena; Huili Grace Xing (DRC, 2019)

Field-plated Ga2O3 Trench Schottky Barrier Diodes with a Record High Figure-of-merit of 0.78 GW/cm2. - Wenshen Li; Kazuki Nomoto; Zongyang Hu; Debdeep Jena; Huili Grace Xing (DRC, 2019)

Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts. - Devansh Saraswat; Wenshen Li; Kazuki Nomoto; Debdeep Jena; Huili Grace Xing (DRC, 2020)

A Composite TE-TFE-FE Model for Schottky Barrier Reverse Current over the Entire Electric-Field Range. - Wenshen Li; Debdeep Jena; Huili Grace Xing (DRC, 2022)

On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs. - Nirmaan Shanker; Li-Chen Wang; Suraj S. Cheema; Wenshen Li; Nilotpal Choudhury; Chenming Hu; Souvik Mahapatra; Sayeef S. Salahuddin (VLSI Technology and Circuits, 2022)