Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer. - Weichun Luo; Hong Yang; Wenwu Wang 006; Yefeng Xu; Bo Tang; Shangqing Ren; Hao Xu; Yanrong Wang; Luwei Qi; Jiang Yan; Huilong Zhu; Chao Zhao; et al. (Microelectron. Reliab., 2016)

Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs. - Longda Zhou; Qingzhu Zhang; Hong Yang; Zhigang Ji; Zhaohao Zhang; Renren Xu; Huaxiang Yin; Wenwu Wang 006 (IRPS, 2020)

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. - Guoliang Tian; Jinshun Bi; Gaobo Xu; Kai Xi; Xueqin Yang; Sandip Majumdar; Huaxiang Yin; Qiuxia Xu; Wenwu Wang 006 (Sci. China Inf. Sci., 2020)

Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks. - Hong Yang; Luwei Qi; Yanbo Zhang; Bo Tang; Qianqian Liu; Hao Xu; Xueli Ma; Xiaolei Wang; Yongliang Li; Huaxiang Yin; Junfeng Li; Huilong Zhu; et al. (Sci. China Inf. Sci., 2020)

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs. - Hao Chang; Longda Zhou; Hong Yang; Zhigang Ji; Qianqian Liu; Eddy Simoen; Huaxiang Yin; Wenwu Wang 006 (IRPS, 2021)

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs. - Longda Zhou; Zhaohao Zhang; Hong Yang; Zhigang Ji; Qianqian Liu; Qingzhu Zhang; Eddy Simoen; Huaxiang Yin; Jun Luo; Anyan Du; Chao Zhao; Wenwu Wang 006 (IRPS, 2021)

Investigation on Contacts Thermal Stability for 3D Sequential Integration. - S. J. Mao; J. B. Liu; Y. Wang; W. B. Liu; Y. P. Hu; H. W. Cui; R. Zhang; H. C. Liu; Z. X. Wang; N. Zhou; Y. K. Zhang; Hong Yang; et al. (IRPS, 2022)

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application. - Kailiang Huang; Xinlv Duan; Junxiao Feng; Ying Sun; Congyan Lu; Chuanke Chen; Guangfan Jiao; Xinpeng Lin; Jinhai Shao; Shihui Yin; Jiazhen Sheng; Zhaogui Wang; et al. (VLSI Technology and Circuits, 2022)

Comprehensive Study of Endurance Fatigue in the Scaled Si FeFET by in-situ Vth Measurement and Endurance Enhancement Strategy. - Xianzhou Shao; Junshuai Chai; Min Liao; Jiahui Duan; Fengbin Tian; Xiaoyu Ke; Xiaoqing Sun; Hao Xu; Jinjuan Xiang; Xiaolei Wang; Wenwu Wang 006 (IMW, 2023)

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing. - Zhaohao Zhang; Guohui Zhan; Weizhuo Gan; Yan Cheng; Xumeng Zhang; Yue Peng; Jianshi Tang; Fan Zhang; Jiali Huo; Gaobo Xu; Qingzhu Zhang; Zhenhua Wu; et al. (Adv. Intell. Syst., 2023)

Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field Effect Transistors. - Saifei Dai; Songwei Li; Shuangshuang Xu; Fengbin Tian; Junshuai Chai; Jiahui Duan; Wenjuan Xiong; Jinjuan Xiang; Yanrong Wang; Hao Xu; Jing Zhang; Xiaolei Wang; et al. (IMW, 2024)

Development of an Algorithm for the Simultaneous Retrieval of Cloud-Top Height and Cloud Optical Thickness Combining Radiative Transfer and Multisource Satellite Information From O₄ Hyperspectral Measurements. - Wenwu Wang 006; Chong Shi; Huazhe Shang; Shuai Yin; Jian Xu 008; Na Xu 001; Lin Chen 017; Husi Letu (IEEE Trans. Geosci. Remote. Sens., 2024)

Improved Memory Window and Retention of Silicon Channel Hf0.5Zr0.5O2 FeFET by Using SiO2/HfO2/SiO2 Gate Side Interlayer. - Runhao Han; Jia Yang; Tao Hu; Mingkai Bai; Yajing Ding; Xianzhou Shao; Saifei Dai; Xiaoqing Sun; Junshuai Chai; Hao Xu; Xiaolei Wang; Wenwu Wang 006; et al. (IRPS, 2025)

NBTI Improvement of HfO2/TiN Gated pMOSFET by Low-Temperature Remote Hydrogen Plasma Treatment. - Songyi Jiang; Junjie Li; Hong Yang; Qianqian Liu; Yunfei Shi; Shuai Yang; Runsheng Wang; Xiaolei Wang; Jun Luo; Wenwu Wang 006 (IRPS, 2025)

Trap Behaviors and Degradation Modeling in Positive Bias Temperature Instability of Back Gated IGZO Transistors. - Liang Xiang; Gangping Yan; Yunfei Shi; Hong Yang; Shangbo Yang; Gaobo Xu; Xiaolei Wang; Guilei Wang; Huaxiang Yin; Chao Zhao; Jun Luo; Wenwu Wang 006 (IRPS, 2025)