A 135 GBps/Gbit 0.66 pJ/bit Stacked Embedded DRAM with Multilayer Arrays by Fine Pitch Hybrid Bonding and Mini-TSV. - Song Wang; Bing Yu; Wenwu Xiao; Fujun Bai; Xiaodong Long; Liang Bai; Xuerong Jia; Fengguo Zuo; Jie Tan; Yixin Guo; Peng Sun; Jun Zhou; et al. (VLSI Technology and Circuits, 2023)

Hf0.5Zr0.5O2 1T-1C FeRAM arrays with excellent endurance performance for embedded memory. - Wenwu Xiao; Yue Peng; Yan Liu; Huifu Duan; Fujun Bai; Bing Yu; Qiwei Ren; Xiao Yu; Genquan Han (Sci. China Inf. Sci., 2023)

Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor. - Fenning Liu; Yue Peng; Wenwu Xiao; Yan Liu; Xiao Yu; Genquan Han (Sci. China Inf. Sci., 2023)

Physics based circuit compatible model for hybrid antiferroelectric random access memory. - Qiuxia Wu; Yue Peng; Wenwu Xiao; Wenxuan Ma 008; Shuo Zhang; Litao Sun; Chunfu Zhang; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2025)