A testbed for DECT physical- and medium access-layer. - Gerhard Schultes; Arpad L. Scholtz; Martin Happel; Werner Simbürger (PIMRC, 1992)

Personal communications transceiver architectures for monolithic integration. - Ernst Bonek; Gerhard Schultes; Peter Kreuzgruber; Werner Simbürger; Peter Weger; T. C. Leslie; J. Popp; Herbert Knapp; N. Rohringer (PIMRC, 1994)

A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz. - Werner Simbürger; Hans-Dieter Wohlmuth; Peter Weger; Alexander Heinz (IEEE J. Solid State Circuits, 1999)

Modeling of monolithic lumped planar transformers up to 20 GHz. - Daniel Kehrer; Werner Simbürger; Hans-Dieter Wohlmuth; Arpad L. Scholtz (CICC, 2001)

A high-IP3 RF receiver chip set for mobile radio base stations up to 2 GHz. - Hans-Dieter Wohlmuth; Werner Simbürger (IEEE J. Solid State Circuits, 2001)

A monolithic 2.45 GHz, 0.56 W power amplifier with 45% PAE at 2.4 V in standard 25 GHz fT Si-bipolar. - Winfried Bakalski; Werner Simbürger; Daniel Kehrer; Hans-Dieter Wohlmuth; Mirjana Rest; Arpad L. Scholtz (ISCAS (4), 2002)

A fully integrated 5.3 GHz, 2.4V, 0.3 W SiGe-bipolar power amplifier with 50Ω output. - Winfried Bakalski; Werner Simbürger; Ronald Thüringer; Andriy Vasylyev; Arpad L. Scholtz (ESSCIRC, 2003)

A low-power low-voltage NMOS bulk-mixer with 20 GHz bandwidth in 90 nm CMOS. - Christoph Kienmayer; Marc Tiebout; Werner Simbürger; Arpad L. Scholtz (ISCAS (4), 2004)

A fully integrated 5.3-GHz 2.4-V 0.3-W SiGe bipolar power amplifier with 50-Ω output. - Winfried Bakalski; Werner Simbürger; Ronald Thüringer; Andriy Vasylyev; Arpad L. Scholtz (IEEE J. Solid State Circuits, 2004)

Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology. - Werner Perndl; Herbert Knapp; Klaus Aufinger; Thomas F. Meister; Werner Simbürger; Arpad L. Scholtz (IEEE J. Solid State Circuits, 2004)

Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology. - Saverio Trotta; Bernhard Dehlink; Herbert Knapp; Klaus Aufinger; Thomas F. Meister; Josef Böck; Werner Simbürger; Arpad L. Scholtz (ESSCIRC, 2007)

An Integrated Gravimetric FBAR Circuit for Operation in Liquids Using a Flip-Chip Extended 0.13μm CMOS Technology. - Marcin K. Augustyniak; W. Weber; Gottfried Beer; Hans Mulatz; L. Elbrecht; H.-J. Timme; Marc Tiebout; Werner Simbürger; Christian Paulus; Björn Eversmann; Doris Schmitt-Landsiedel; Roland Thewes; et al. (ISSCC, 2007)

A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar. - Saverio Trotta; Herbert Knapp; Donald Dibra; Klaus Aufinger; Thomas F. Meister; Josef Böck; Werner Simbürger; Arpad L. Scholtz (ISSCC, 2007)

An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology. - Saverio Trotta; Herbert Knapp; Klaus Aufinger; Thomas F. Meister; Josef Böck; Bernhard Dehlink; Werner Simbürger; Arpad L. Scholtz (IEEE J. Solid State Circuits, 2007)

Low-noise ESD-protected 24 GHz receiver for radar applications in SiGe: C technology. - Vadim Issakov; Herbert Knapp; Filippo Magrini; Andreas Thiede; Werner Simbürger; Linus Maurer (ESSCIRC, 2009)

Merged power amplifier and mixer circuit topology for radar applications in CMOS. - Vadim Issakov; Marc Tiebout; Herbert Knapp; Yiqun Cao; Werner Simbürger (ESSCIRC, 2009)

Comparison of 24 GHz receiver front-ends using active and passive mixers in CMOS. - Vadim Issakov; Domagoj Siprak; Marc Tiebout; Andreas Thiede; Werner Simbürger; Linus Maurer (IET Circuits Devices Syst., 2009)

System ESD robustness by co-design of on-chip and on-board protection measures. - Harald Gossner; Werner Simbürger; Matthias Stecher (Microelectron. Reliab., 2010)

On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP). - Martin Sauter; Werner Simbürger; David Johnsson; Matthias Stecher (Microelectron. Reliab., 2011)

ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique. - Matteo Rigato; Clément Fleury; Michael Heer; Mattia Capriotti; Werner Simbürger; Dionyz Pogany (Microelectron. Reliab., 2015)

Transient voltage suppressors - technologies and characteristics. - Werner Simbürger; Joost A. Willemen; Vadim Vendt; Thomas Schwingshackl; Antoine D'Arbonneau (Elektrotech. Informationstechnik, 2016)

A 6 kV ESD-Protected Low-Power 24 GHz LNA for Radar Applications in SiGe BiCMOS. - Vadim Issakov; Sebastian Kehl-Waas; Radu Ciocoveanu; Werner Simbürger; Angelika Geiselbrechtinger (BCICTS, 2018)