AlInAs/GaInAs HBT IC technology. - Joseph F. Jensen; William E. Stanchina; Robert A. Metzger; David B. Rensch; Ross F. Lohr; Renee Wong Quen; Michael W. Pierce; Young K. Allen; Peggy F. Lou (IEEE J. Solid State Circuits, 1991)

33-GHz monolithic cascode AlInAs/GaInAs heterojunction bipolar transistor feedback amplifier. - Mark Rodwell; Joseph F. Jensen; William E. Stanchina; R. A. Metzger; David B. Rensch; M. W. Pierce; T. V. Kargodorian; Y. K. Allen (IEEE J. Solid State Circuits, 1991)

InP-HBT chip-set for 40-Gb/s fiber optical communication systems operational at 3 V. - Mehran Mokhtari; Thomas Swahn; Robert H. Walden; William E. Stanchina; Michael Kardos; Tarja Juhola; Gerd Schuppener; Hannu Tenhunen; Thomas Lewin (IEEE J. Solid State Circuits, 1997)

InP-HBT-based VHSICs and OEICs for optical fiber communication systems. - Mehran Mokhtari; Urban Westergren; Bo Willén; Thomas Swahn; William E. Stanchina (ICECS, 1998)

High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links. - Jens Müllrich; Herbert Thurner; Ernst Müllner; Joseph F. Jensen; William E. Stanchina; Michael Kardos; Hans-Martin Rein (IEEE J. Solid State Circuits, 2000)

100+ GHz static divide-by-2 circuit in InP-DHBT technology. - Mehran Mokhtari; Charles H. Fields; Rajesh D. Rajavel; Marko Sokolich; Joseph F. Jensen; William E. Stanchina (IEEE J. Solid State Circuits, 2003)

Sustainable IC design and fabrication. - Donald Kline Jr.; Nikolas Parshook; Alex Johnson; James E. Stine; William E. Stanchina; Erik Brunvand; Alex K. Jones (IGSC, 2017)