Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT. - A. Brannick; N. A. Zakhleniuk; B. K. Ridley; Lester F. Eastman; James R. Shealy; William J. Schaff (Microelectron. J., 2009)

A comparative study of electrical and optical properties of InN and In0.48Ga0.52N. - M. Gunes; N. Balkan; D. Zanato; William J. Schaff (Microelectron. J., 2009)

Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures. - Daniel Hofstetter; Esther Baumann; Fabrizio Raphael Giorgetta; Ricardo Théron; Hong Wu; William J. Schaff; Jahan Dawlaty; Paul A. George; Lester F. Eastman; Farhan Rana; Prem K. Kandaswamy; Fabien Guillot; et al. (Proc. IEEE, 2010)