On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes. - William Vandendaele; Thomas Lorin; Romain Gwoziecki; Yannick Baines; Jérome Biscarrat; Marie-Anne Jaud; Charlotte Gillot; Matthew Charles; Marc Plissonnier; Gilles Reimbold (ESSDERC, 2017)

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. - William Vandendaele; Xavier Garros; Thomas Lorin; Erwan Morvan; A. Torres; René Escoffier; Marie-Anne Jaud; Marc Plissonnier; Fred Gaillard (IRPS, 2018)

Study of forward AC stress degradation of GaN-on-Si Schottky diodes. - Thomas Lorin; William Vandendaele; Romain Gwoziecki; Charlotte Gillot; Jérome Biscarrat; Gérard Ghibaudo; Fred Gaillard (Microelectron. Reliab., 2018)

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Romain Gwoziecki; A. Torres; Marc Plissonnier; Fred Gaillard; Gérard Ghibaudo; Roberto Modica; Ferdinando Iucolano; Matteo Meneghini; Gaudenzio Meneghesso (IRPS, 2019)

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. - B. Rrustemi; Aby-Gaël Viey; Marie-Anne Jaud; François Triozon; William Vandendaele; Charles Leroux; Jacques Cluzel; S. Martin; Cyrille Le Royer; Romain Gwoziecki; Roberto Modica; Ferdinando Iucolano; et al. (ESSDERC, 2021)

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. - Aby-Gaël Viey; William Vandendaele; Marie-Anne Jaud; Jean Coignus; Jacques Cluzel; Alexis Krakovinsky; Simon Martin 006; Jérome Biscarrat; Romain Gwoziecki; Veronique Sousa; Fred Gaillard; Roberto Modica; et al. (IRPS, 2021)

Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage. - Camille Leurquin; William Vandendaele; Aby-Gaël Viey; Romain Gwoziecki; René Escoffier; R. Salot; Ghislain Despesse; Ferdinando Iucolano; Roberto Modica; Aurore Constant (IRPS, 2022)

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs. - Camille Leurquin; William Vandendaele; Romain Gwoziecki; B. Mohamad; Ghislain Despesse; Ferdinando Iucolano; Roberto Modica; Aurore Constant (IRPS, 2023)

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited). - William Vandendaele; Camille Leurquin; R. Lavieville; Marie-Anne Jaud; Abygaël Viey; Romain Gwoziecki; B. Mohamad; Etienne Nowak; Aurore Constant; Ferdinando Iucolano (IRPS, 2023)

Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications. - Daphnée Bosch; Abygaël Viey; Tadeu Mota Frutuoso; P. Lheritier; C. Licitra; Nada Zerhouni; A. Albouy; Laurent Brunet; A. Magalhaes-Lucas; L. M. B. da Silva; H. Boutry; M. Husien Fahmy Taha Abdelrahman; et al. (VLSI Technology and Circuits, 2024)

Fast CV MSM Technique for Comprehensive Analysis of Bulk Trapping in Low-K Carbon-Doped Dielectrics. - Tadeu Mota Frutuoso; William Vandendaele; A. Bond; F. Bringuier; V. Lapras; Marie Claire Cyrille; Claire Fenouillet-Béranger; B. Duriez; Xavier Garros (IRPS, 2025)

Influence of Process Integration on pBTI Degradation in Analog SOI nMOSFETs. - Abygaël Viey; William Vandendaele; P. Kouaté Wafo; Xavier Garros; Luigi Basset; F. Ponthenier; Joris Lacord; R. Fillon; X. Federspiel; D. Roy; S. Joblot; Dominique Golanski (IRPS, 2025)