A 55nm 0.55v 6T SRAM with variation-tolerant dual-tracking word-line under-drive and data-aware write-assist. - Yi-Wei Lin; Hao-I Yang; Geng-Cing Lin; Chi-Shin Chang; Ching-Te Chuang; Wei Hwang; Chia-Cheng Chen; Willis Shih; Huan-Shun Huang (ISLPED, 2012)