A monolithic 2.45 GHz, 0.56 W power amplifier with 45% PAE at 2.4 V in standard 25 GHz fT Si-bipolar. - Winfried Bakalski; Werner Simbürger; Daniel Kehrer; Hans-Dieter Wohlmuth; Mirjana Rest; Arpad L. Scholtz (ISCAS (4), 2002)

A fully integrated 5.3 GHz, 2.4V, 0.3 W SiGe-bipolar power amplifier with 50Ω output. - Winfried Bakalski; Werner Simbürger; Ronald Thüringer; Andriy Vasylyev; Arpad L. Scholtz (ESSCIRC, 2003)

A fully integrated 5.3-GHz 2.4-V 0.3-W SiGe bipolar power amplifier with 50-Ω output. - Winfried Bakalski; Werner Simbürger; Ronald Thüringer; Andriy Vasylyev; Arpad L. Scholtz (IEEE J. Solid State Circuits, 2004)

A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier. - Winfried Bakalski; Bernhard Sogl; Markus Zannoth; Michael Asam; Boris Kapfelsperger; Jörg Berkner; Bernd Eisener; Wolfgang Thomann; Siegfried Marcon; Wilfried Osterreicher; Ewa Napieralska; Erwin Rampf; et al. (IEEE J. Solid State Circuits, 2008)

A fully integrated Bulk-CMOS switch based tunable transformer for RF and antenna matching. - Winfried Bakalski; Anthony Thomas; Robert Weigel (RWS, 2013)