Silicon germanium and silicon bipolar RF circuits for 2.7 V single chip radio transceiver integration. - Jan Sevenhans; Bart Verstraeten; Graham Fletcher; Harry Dietrich; Winfried Rabe; Jean Luc Bacq; J. Varin; J. Dulongpont (CICC, 1998)

Physics- and process-based bipolar transistor modeling for integrated circuit design. - Michael Schröter; Hans-Martin Rein; Winfried Rabe; Reinhard Reimann; Hans-Joachim Wassener; Andreas Koldehoff (IEEE J. Solid State Circuits, 1999)