CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics. - Ernest Y. Wu; Edward J. Nowak; Alex Vayshenker; Wing L. Lai; David L. Harmon (IBM J. Res. Dev., 2002)

A new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO2 and nitride-oxide dielectrics. - Fen Chen; Rolf-Peter Vollertsen; Baozhen Li; Dave Harmon; Wing L. Lai (Microelectron. Reliab., 2002)

Statistics of soft and hard breakdown in thin SiO2 gate oxides. - Jordi Suñé; Ernest Y. Wu; David Jiménez; Wing L. Lai (Microelectron. Reliab., 2003)

Critical reliability challenges in scaling SiO2-based dielectric to its limit. - Ernest Y. Wu; Jordi Suñé; Wing L. Lai; Alex Vayshenker; Edward J. Nowak; David L. Harmon (Microelectron. Reliab., 2003)