Prospects of germanium-based MOSFETs and tunnel transistors for low power digital logic. - Winston Chern (2017)

Improved Endurance with Electron-Only Switching in Ferroelectric Devices. - Zheng Wang; Nujhat Tasneem; Hang Chen; Shimeng Yu; Winston Chern; Asif Islam Khan (DRC, 2022)

Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention. - Prasanna Venkatesan Ravindran; Andrea Padovani; Lance Fernandes; Priyankka Gundlapudi Ravikumar; Chinsung Park; Huy Tran; Zekai Wang; Hari Jayasankar; Amrit Garlapati; Taeyoung Song; Hang Chen; Winston Chern; et al. (IRPS, 2025)