Coplanar millimeter-wave ICs for W-band applications using 0.15 μm pseudomorphic MODFETs. - Michael Schlechtweg; William H. Haydl; Axel Bangert; Jürgen Braunstein; Paul J. Tasker; Ludger Verweyen; Hermann Massler; Wolfgang Bronner; Axel Hülsmann; Klaus Köhler (IEEE J. Solid State Circuits, 1996)

20-40 Gb/s 0.2-μm GaAs HEMT chip set for optical data receiver. - Manfred Lang; Zhi-Gong Wang; Zhihao Lao; Michael Schlechtweg; Andreas Thiede; Michaela Rieger-Motzer; Martin Sedler; Wolfgang Bronner; Gudrun Kaufel; Klaus Köhler; Axel Hülsmann; Brian Raynor (IEEE J. Solid State Circuits, 1997)

35-GHz static and 48-GHz dynamic frequency divider ICs using 0.2-μm AlGaAs/GaAs-HEMTs. - Zhihao Lao; Wolfgang Bronner; Andreas Thiede; Michael Schlechtweg; Axel Hülsmann; Michaela Rieger-Motzer; Gudrun Kaufel; Brian Raynor; Martin Sedler (IEEE J. Solid State Circuits, 1997)

40-Gb/s high-power modulator driver IC for lightwave communication systems. - Zhihao Lao; Andreas Thiede; Ulrich Nowotny; Hariolf Lienhart; Volker Hurm; Michael Schlechtweg; Jochen Hornung; Wolfgang Bronner; Klaus Köhler; Axel Hülsmann; Brian Raynor; Theo Jakobus (IEEE J. Solid State Circuits, 1998)

Mixed signal integrated circuits based on GaAs HEMTs. - Andreas Thiede; Zhi-Gong Wang; Michael Schlechtweg; Manfred Lang; Petra Leber; Zhihao Lao; Ulrich Nowotny; Volker Hurm; Michaela Rieger-Motzer; Manfred Ludwig; Martin Sedler; Klaus Köhler; et al. (IEEE Trans. Very Large Scale Integr. Syst., 1998)

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. - Maximilian Dammann; W. Pletschen; Patrick Waltereit; Wolfgang Bronner; Rüdiger Quay; Stefan Müller; Michael Mikulla; Oliver Ambacher; P. J. van der Wel; S. Murad; T. Rödle; R. Behtash; et al. (Microelectron. Reliab., 2009)

Imaging Standoff Detection of Explosives by Diffuse Reflectance IR Laser Spectroscopy. - Frank Fuchs; Jan Phillip Jarvis; Stefan Hugger; Michel Kinzer; Quankui Yang; Wolfgang Bronner; Rachid Driad; Rolf Aidam (Future Security, 2012)

Degradation of 0.25 μm GaN HEMTs under high temperature stress test. - Maximilian Dammann; Martina Baeumler; Peter Brückner; Wolfgang Bronner; Stephan Maroldt; Helmer Konstanzer; Matthias Wespel; Rüdiger Quay; Michael Mikulla; Andreas Graff; M. Lorenzini; M. Fagerlind; et al. (Microelectron. Reliab., 2015)