Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits. - Christian Schlünder; Ralf Brederlow; Benno Ankele; Wolfgang Gustin; Karl Goser; Roland Thewes (Microelectron. Reliab., 2005)

NBTI on smart power technologies: A detailed analysis of two concurrent effects using a re-examined on-the-fly technique. - Stefano Aresu; Reinhard Pufall; Michael Goroll; Wolfgang Gustin (Microelectron. Reliab., 2008)

New aspects for lifetime prediction of bipolar transistors in automotive power wafer technologies by using a power law fitting procedure. - Michael Goroll; Reinhard Pufall; Stefano Aresu; Wolfgang Gustin (Microelectron. Reliab., 2008)

New insights on the PBTI phenomena in SiON pMOSFETs. - Karina Rott; Hans Reisinger; Stefano Aresu; Christian Schlünder; Klaus Kölpin; Wolfgang Gustin; Tibor Grasser (Microelectron. Reliab., 2012)

HCS degradation of 5 nm oxide high-voltage PLDMOS. - C. Olk; Stefano Aresu; R. Rudolf; M. Röhner; Wolfgang Gustin; E. Stein Von Kamienski (Microelectron. Reliab., 2014)

Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors. - Gunnar Andreas Rott; Karina Rott; Hans Reisinger; Wolfgang Gustin; Tibor Grasser (Microelectron. Reliab., 2014)

Degradation and recovery of variability due to BTI. - Christian Schlünder; Jörg Berthold; Fabian Proebster; Andreas Martin 002; Wolfgang Gustin; Hans Reisinger (Microelectron. Reliab., 2016)

Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI. - Katja Puschkarsky; Hans Reisinger; Christian Schlünder; Wolfgang Gustin; Tibor Grasser (ESSDERC, 2018)

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. - Katja Puschkarsky; Tibor Grasser; Thomas Aichinger; Wolfgang Gustin; Hans Reisinger (IRPS, 2018)

NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification. - Christian Schlünder; Katja Puschkarsky; Gunnar Andreas Rott; Wolfgang Gustin; Hans Reisinger (Microelectron. Reliab., 2018)

Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs. - Maximilian W. Feil; Hans Reisinger; André Kabakow; Thomas Aichinger; Wolfgang Gustin; Tibor Grasser (IRPS, 2022)

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. - Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Thomas Aichinger; Paul Salmen; Gerald Rescher; Wolfgang Gustin; Tibor Grasser (IRPS, 2023)

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. - Tibor Grasser; Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Dominic Waldhör; A. Vasilev; Michael Waltl; Thomas Aichinger; M. Bockstedte; Wolfgang Gustin; Gregor Pobegen (IRPS, 2024)