A 32Gb MLC NAND-flash memory with Vth-endurance-enhancing schemes in 32nm CMOS. - Changhyuk Lee; Sok-Kyu Lee; Sunghoon Ahn; Jinhaeng Lee; Wonsun Park; Yongdeok Cho; Chaekyu Jang; Chulwoo Yang; Sanghwa Chung; In-Suk Yun; Byoungin Joo; Byoungkwan Jeong; et al. (ISSCC, 2010)

A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS. - Changhyuk Lee; Sok-Kyu Lee; Sunghoon Ahn; Jinhaeng Lee; Wonsun Park; Yongdeok Cho; Chaekyu Jang; Chulwoo Yang; Sanghwa Chung; In-Suk Yun; Byoungin Joo; Byoungkwan Jeong; et al. (IEEE J. Solid State Circuits, 2011)

A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density. - Wanik Cho; Jongseok Jung; Jongwoo Kim; Junghoon Nam; Sangkyu Lee; Yujong Noh; Dauni Kim; Wanseob Lee; Kayoung Cho; Kwanho Kim; Heejoo Lee; Sooyeol Chai; et al. (ISSCC, 2022)

A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $ mathsf{i}$. - Bvunarvul Kim; Seungpil Lee; Beomseok Hah; Kanawoo Park; Yongsoon Park; Kangwook Jo; Yujong Noh; Hyeon-Cheon Seol; Hyunsoo Lee; Jae-Hyeon Shin; Seongjin Choi; Youngdon Jung; et al. (ISSCC, 2023)

A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput. - Wanik Cho; Chanhui Jeong; Jongwoo Kim; Jongseok Jung; Keunseon Ahn; Jayoon Goo; Sangkyu Lee; Kayoung Cho; Tei Cho; Dauni Kim; Gwan Park; Yushin Ahn; et al. (ISSCC, 2025)