19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming. - Ki-Tae Park; Jin-Man Han; Dae-Han Kim; Sangwan Nam; Kihwan Choi; Minsu Kim 004; Pansuk Kwak; Doosub Lee; Yoon-Hee Choi; Kyung-Min Kang; Myung-Hoon Choi; Dong-Hun Kwak; et al. (ISSCC, 2014)

11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. - Chulbum Kim; Ji-Ho Cho; Woopyo Jeong; Il-Han Park; Hyun Wook Park; Doo-Hyun Kim; Daewoon Kang; Sunghoon Lee; Ji-Sang Lee; Wontae Kim 004; Jiyoon Park; Yang-Lo Ahn; et al. (ISSCC, 2017)

A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface. - Dongku Kang; Minsu Kim 004; Suchang Jeon; Wontaeck Jung; Jooyong Park; Gyo Soo Choo; Dong-Kyo Shim; Anil Kavala; Seungbum Kim; Kyung-Min Kang; Jiyoung Lee; Kuihan Ko; et al. (ISSCC, 2019)

A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface. - Jiho Cho; D. Chris Kang; Jongyeol Park; Sangwan Nam; Jung-Ho Song; Bong-Kil Jung; Jaedoeg Lyu; Hogil Lee; Won-Tae Kim 004; Hongsoo Jeon; Sunghoon Kim 001; In-Mo Kim; et al. (ISSCC, 2021)

A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface. - Moosung Kim; Sung-Won Yun; Jungjune Park; Hyun Kook Park; Jungyu Lee 002; Yeong Seon Kim; Dae-Hoon Na; Sara Choi; Youngsun Song; Jonghoon Lee; Hyun-Jun Yoon; Kangbin Lee; et al. (ISSCC, 2022)

30.1 A 28Gb/mm24XX-Layer 1Tb 3b/Cell WF-Bonding 3D-NAND Flash with 5.6Gb/s/Pin IOs. - Sang-Soo Park; Jaedoeg Lyu; Myungjun Kim; Jaeyun Lee; Youngsun Song; Chungho Yu; Makoto Hirano; Yongseok Kwon; Jonghoon Park; Hojoon Kim; Daein Lee; Donghyun Seo; et al. (ISSCC, 2025)