A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme. - Gitae Jeong; Wooyoung Cho; Sujin Ahn; Hongsik Jeong; Gwanhyeob Koh; Youngnam Hwang; Kinam Kim (IEEE J. Solid State Circuits, 2003)