Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development. - S. Courtas; M. Grégoire; X. Federspiel; N. Bicaïs-Lépinay; C. Wyon (Microelectron. Reliab., 2006)

FEM-based method to determine mechanical stress evolution during process flow in microelectronics, application to stress-voiding. - S. Orain; J.-C. Barbé; X. Federspiel; P. Legallo; H. Jaouen (Microelectron. Reliab., 2007)

Microscopic scale characterization and modeling of transistor degradation under HC stress. - Yoann Mamy Randriamihaja; Vincent Huard; Xavier Federspiel; Alban Zaka; Pierpaolo Palestri; Denis Rideau; David Roy 001; Alain Bravaix (Microelectron. Reliab., 2012)

Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI. - M. Saliva; Florian Cacho; Vincent Huard; X. Federspiel; D. Angot; Ahmed Benhassain; Alain Bravaix; Lorena Anghel (DATE, 2015)

Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology. - A. Benoist; S. Denorme; X. Federspiel; Bruno Allard; Philippe Candelier (IRPS, 2015)

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. - Guillaume Besnard; Xavier Garros; Alexandre Subirats; François Andrieu; X. Federspiel; M. Rafik; Walter Schwarzenbach; Gilles Reimbold; Olivier Faynot; Sorin Cristoloveanu (IRPS, 2015)

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. - A. Bezza; M. Rafik; David Roy 001; X. Federspiel; P. Mora; Cheikh Diouf; Vincent Huard; Gérard Ghibaudo (IRPS, 2015)

28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation. - P. Mora; X. Federspiel; Florian Cacho; Vincent Huard; Wafa Arfaoui (IRPS, 2015)

Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes. - Alain Bravaix; M. Saliva; Florian Cacho; X. Federspiel; Cheikh Ndiaye; Souhir Mhira; Edith Kussener; E. Pauly; Vincent Huard (IOLTS, 2016)

Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. - Alain Bravaix; Florian Cacho; X. Federspiel; Cheikh Ndiaye; Souhir Mhira; Vincent Huard (Microelectron. Reliab., 2016)

Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. - Cheikh Ndiaye; Vincent Huard; X. Federspiel; Florian Cacho; Alain Bravaix (Microelectron. Reliab., 2016)

Guidelines for intermediate back end of line (BEOL) for 3D sequential integration. - Claire Fenouillet-Béranger; S. Beaurepaire; Fabien Deprat; Alexandre Ayres De Sousa; Laurent Brunet; Perrine Batude; Olivier Rozeau; François Andrieu; Paul Besombes; M.-P. Samson; Bernard Previtali; F. Nemouchi; et al. (ESSDERC, 2017)

Characterization of Low Drop-Out during ageing and design for yield. - R. Lajmi; Florian Cacho; Estelle Lauga-Larroze; Sylvain Bourdel; Ph. Benech; Vincent Huard; X. Federspiel (Microelectron. Reliab., 2017)

Integrated Test Structures for Reliability Investigation under Dynamic Stimuli. - Florian Cacho; D. Nouguier; M. Arabi; X. Federspiel; Y. Carminati; M. Saliva (IOLTS, 2018)

Modeling self-heating effects in advanced CMOS nodes. - M. Arabi; A. Cros; X. Federspiel; Cheikh Ndiaye; Vincent Huard; M. Rafik (IRPS, 2018)

A new method for quickly evaluating reversible and permanent components of the BTI degradation. - Xavier Garros; Alexandre Subirats; Gilles Reimbold; Fred Gaillard; Cheikh Diouf; X. Federspiel; Vincent Huard; M. Rafik (IRPS, 2018)

Key parameters driving transistor degradation in advanced strained SiGe channels. - Vincent Huard; Cheikh Ndiaye; M. Arabi; Narendra Parihar; X. Federspiel; Souhir Mhira; S. Mahapatra; Alain Bravaix (IRPS, 2018)

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). - Antoine Laurent; Xavier Garros; Sylvain Barraud; J. Pelloux-Prayer; Mikaël Cassé; Fred Gaillard; X. Federspiel; David Roy 001; E. Vincent; Gérard Ghibaudo (IRPS, 2018)

AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment. - M. Rafik; A. P. Nguyen; Xavier Garros; M. Arabi; X. Federspiel; Cheikh Diouf (IRPS, 2018)

Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors. - Xavier Garros; Antoine Laurent; Alexandre Subirats; X. Federspiel; E. Vincent; Gilles Reimbold (Microelectron. Reliab., 2018)

New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. - D. Nouguier; X. Federspiel; Gérard Ghibaudo; M. Rafik; David Roy 001 (Microelectron. Reliab., 2018)

Global and Local Process Variation Simulations in Design for Reliability approach. - Audrey Michard; Florian Cacho; Damien Celeste; Xavier Federspiel (IOLTS, 2019)

Investigation of NBTI Dynamic Behavior with Ultra-Fast Measurement. - Florian Cacho; X. Federspiel; D. Nouguier; Cheikh Diouf (IRPS, 2019)

Process Optimization for HCI Improvement in I/O Analog Devices. - Cheikh Diouf; N. Guitard; M. Rafik; J. J. Martinez; X. Federspiel; Alain Bravaix; D. Muller; David Roy 001 (IRPS, 2019)

Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. - A. P. Nguyen; Xavier Garros; M. Rafik; Florian Cacho; David Roy 001; Xavier Federspiel; Fred Gaillard (IRPS, 2019)

Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS. - Alain Bravaix; Edith Kussener; David Ney; Xavier Federspiel; Florian Cacho (IRPS, 2020)

Comparison of variability of HCI induced drift for SiON and HKMG devices. - Xavier Federspiel; Cheikh Diouf; Florian Cacho; Emmanuel Vincent 004 (IRPS, 2020)

Monitoring Setup and Hold Timing Limits. - Florian Cacho; Lorena Anghel; Xavier Federspiel (IRPS, 2021)

HCI Temperature sense effect from 180nm to 28nm nodes. - Xavier Federspiel; Abdourahmane Camara; Audrey Michard; Cheikh Diouf; Florian Cacho (IRPS, 2021)

Analysis of the interactions of HCD under "On" and "Off" state modes for 28nm FDSOI AC RF modelling. - Tidjani Garba-Seybou; Xavier Federspiel; Alain Bravaix; Florian Cacho (IRPS, 2021)

BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. - Louis Gerrer; Jacques Cluzel; Fred Gaillard; Xavier Garros; Xavier Federspiel; Florian Cacho; David Roy 001; E. Vincent (IRPS, 2021)

Frequency dependant gate oxide TDDB model. - M. Arabi; X. Federspiel; Florian Cacho; M. Rafik; S. Blonkowski; Xavier Garros; G. Guibaudo (IRPS, 2022)

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes. - Tidjani Garba-Seybou; Xavier Federspiel; Alain Bravaix; Florian Cacho (IRPS, 2022)

Insight Into HCI Reliability on I/O Nitrided Devices. - C. Doyen; V. Yon; Xavier Garros; Luigi Basset; Tadeu Mota Frutuoso; C. Dagon; Cheikh Diouf; X. Federspiel; V. Millon; Frederic Monsieur; C. Pribat; David Roy 001 (IRPS, 2023)

Effect of Frequency on Reliability Of High-K MIM Capacitors. - X. Federspiel; A. Griffon; M. Barlas; P. Lamontagne (IRPS, 2023)

Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. - Tidjani Garba-Seybou; Xavier Federspiel; Frederic Monsieur; Mathieu Sicre; Florian Cacho; Joycelyn Hai; Alain Bravaix (IRPS, 2023)

Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation. - Joycelyn Hai; Florian Cacho; X. Federspiel; Tidjani Garba-Seybou; A. Divay; Estelle Lauga-Larroze; Jean-Daniel Arnould (IRPS, 2023)

Characterization and modeling of DCR and DCR drift variability in SPADs. - Mathieu Sicre; X. Federspiel; Bastien Mamdy; David Roy 001; Françis Calmon (IRPS, 2023)

Robustness Assessment Through 77GHz Operating Life Test of Power Amplifier for Radar Applications in 28nm FD-SOI CMOS. - Florian Cacho; P. Cathelin; Joycelyn Hai; S. Bouvot; Jean-Francois Jozef Nowakowski; M. Martinez; R. Debroucke; S. Jean; R. Paulin; J. Antonijevic; X. Federspiel; Nicolas Planes; et al. (IRPS, 2024)

A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. - A. Divay; Cédric Dehos; Ismael Charlet; Fred Gaillard; B. Duriez; Xavier Garros; J. Antonijevic; Joycelyn Hai; Nathalie Revil; Jeremie Forest; Vincent Knopik; Florian Cacho; et al. (IRPS, 2024)

Non-conducting Hot carrier temperature activation and temperature sense effect. - X. Federspiel; Cheikh Diouf; B. Arunachalam; David Roy 001; Florian Cacho (IRPS, 2024)

Influence of Process Integration on pBTI Degradation in Analog SOI nMOSFETs. - Abygaël Viey; William Vandendaele; P. Kouaté Wafo; Xavier Garros; Luigi Basset; F. Ponthenier; Joris Lacord; R. Fillon; X. Federspiel; D. Roy; S. Joblot; Dominique Golanski (IRPS, 2025)