Vertical field effect transistor with sub-15nm gate-all-around on Si nanowire array. - Guilhem Larrieu; Y. Guerfi; X. L. Han; N. Clement (ESSDERC, 2015)

A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT. - S. H. Meng; X. L. Han; Peng Ding; B. Mei; Yongbo Su; Jialin Zhang; H. Q. Yun; Zhi Jin; Yinghui Zhong (Microelectron. J., 2024)

Radiation effects modeling of InP-based HEMT based on neural networks. - Yinghui Zhong; X. L. Han; H. Q. Yun; B. Mei; Yongbo Su; Zhi Jin; C. Zhang (Microelectron. J., 2024)