Characterising the surface roughness of AFM grown SiO2 on Si. - Daniel Hill; X. Blasco; Marc Porti; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2001)

Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope. - Marc Porti; X. Blasco; Montserrat Nafría; Xavier Aymerich; Alexander Olbrich; Bernd Ebersberger (Microelectron. Reliab., 2001)

Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films. - Rosana Rodríguez; Marc Porti; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2001)

Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures. - X. Blasco; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2002)

Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM. - Marc Porti; S. Meli; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2003)

Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. - Marc Porti; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2003)

The measurement of the tip current noise as a method to characterize the exposed area of coated ESTM tips. - Gabriel Abadal; Francesc Pérez-Murano; Núria Barniol; Xavier Aymerich (IEEE Trans. Instrum. Meas., 2003)

A new approach to the modeling of oxide breakdown on CMOS circuits. - Raul Fernández; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2004)

Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses. - Marc Porti; S. Meli; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2004)

Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale. - Lidia Aguilera; Marc Porti; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2005)

Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM. - X. Blasco; Montserrat Nafría; Xavier Aymerich; J. Pétry; Wilfried Vandervorst (Microelectron. Reliab., 2005)

Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics. - Raul Fernández; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2005)

FinFET and MOSFET preliminary comparison of gate oxide reliability. - Raul Fernández; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; Ben Kaczer; Guido Groeseneken (Microelectron. Reliab., 2006)

Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions. - Esteve Amat; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; James H. Stathis (Microelectron. Reliab., 2007)

Effect of oxide breakdown on RS latches. - Raul Fernández; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2007)

Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs. - Javier Martín-Martínez; Simone Gerardin; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; Andrea Cester; Alessandro Paccagnella; G. Ghidini (Microelectron. Reliab., 2007)

Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror. - Javier Martín-Martínez; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; James H. Stathis (Microelectron. Reliab., 2007)

Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors. - W. Polspoel; Wilfried Vandervorst; Lidia Aguilera; Marc Porti; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2008)

Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses. - Albert Crespo-Yepes; Javier Martín-Martínez; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2009)

Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale. - Mario Lanza; Marc Porti; Montserrat Nafría; Xavier Aymerich; G. Ghidini; A. Sebastiani (Microelectron. Reliab., 2009)

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements. - Mario Lanza; Marc Porti; Montserrat Nafría; Xavier Aymerich; E. Whittaker; B. Hamilton (Microelectron. Reliab., 2010)

SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors. - Javier Martín-Martínez; Esteve Amat; M. B. González; P. Verheyen; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; Eddy Simoen (Microelectron. Reliab., 2010)

Unified characterization of RTN and BTI for circuit performance and variability simulation. - Nuria Ayala; Javier Martín-Martínez; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich (ESSDERC, 2012)

Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs. - Nuria Ayala; Javier Martín-Martínez; Rosana Rodríguez; M. B. González; Montserrat Nafría; Xavier Aymerich; Eddy Simoen (Microelectron. Reliab., 2012)

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures. - Violaine Iglesias 002; Mario Lanza; Albin Bayerl; Marc Porti; Montserrat Nafría; Xavier Aymerich; Lifeng Liu; Jinfeng Kang; Gennadi Bersuker; Kai Zhang; Ziyong Shen (Microelectron. Reliab., 2012)

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. - Albin Bayerl; Mario Lanza; Lidia Aguilera; Marc Porti; Montserrat Nafría; Xavier Aymerich; Stefan De Gendt (Microelectron. Reliab., 2013)

Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications. - Albert Crespo-Yepes; Javier Martín-Martínez; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2013)

Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs. - V. Velayudhan; Francisco Gámiz; Javier Martín-Martínez; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2013)

Threshold voltage and on-current Variability related to interface traps spatial distribution. - V. Velayudhan; Javier Martín-Martínez; Marc Porti; Carlos Couso; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; Carlos Marquez; Francisco Gámiz (ESSDERC, 2015)

Investigation of Conductivity Changes in Memristors under Massive Pulsed Characterization. - Marta Pedro; Javier Martín-Martínez; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich (DCIS, 2018)

Experimental Verification of Memristor-Based Material Implication NAND Operation. - Marcos Maestro-Izquierdo; Javier Martín-Martínez; Albert Crespo-Yepes; Manel Escudero; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; Antonio Rubio 001 (IEEE Trans. Emerg. Top. Comput., 2019)