A 0.025-mm2 0.8-V 78.5dB-SNDR VCO-Based Sensor Readout Circuit in a Hybrid PLL-ΔΣM Structure. - Shaolan Li; Wenda Zhao; Biying Xu; Xiangxing Yang; Xiyuan Tang; Linxiao Shen; Nanshu Lu; David Z. Pan; Nan Sun 001 (CICC, 2019)

A 16fJ/Conversion-Step Time-Domain Two-Step Capacitance-to-Digital Converter. - Xiyuan Tang; Shaolan Li; Linxiao Shen; Wenda Zhao; Xiangxing Yang; Randy Williams; Jiaxin Liu; Zhichao Tan; Neal A. Hall; Nan Sun 001 (ISSCC, 2019)

An Energy-Efficient Comparator with Dynamic Floating Inverter Pre-Amplifier. - Xiyuan Tang; Begum Kasap; Linxiao Shen; Xiangxing Yang; Wei Shi 011; Nan Sun 001 (VLSI Circuits, 2019)

9.5 A 13.5b-ENOB Second-Order Noise-Shaping SAR with PVT-Robust Closed-Loop Dynamic Amplifier. - Xiyuan Tang; Xiangxing Yang; Wenda Zhao; Chen-Kai Hsu; Jiaxin Liu; Linxiao Shen; Abhishek Mukherjee; Wei Shi 011; David Z. Pan; Nan Sun 001 (ISSCC, 2020)

An Energy-Efficient Time-Domain Incremental Zoom Capacitance-to-Digital Converter. - Xiyuan Tang; Shaolan Li; Xiangxing Yang; Linxiao Shen; Wenda Zhao; Randall P. Williams; Jiaxin Liu; Zhichao Tan; Neal A. Hall; David Z. Pan; Nan Sun 001 (IEEE J. Solid State Circuits, 2020)

An Energy-Efficient Comparator With Dynamic Floating Inverter Amplifier. - Xiyuan Tang; Linxiao Shen; Begum Kasap; Xiangxing Yang; Wei Shi 011; Abhishek Mukherjee; David Z. Pan; Nan Sun 001 (IEEE J. Solid State Circuits, 2020)

A 13.5-ENOB, 107-μW Noise-Shaping SAR ADC With PVT-Robust Closed-Loop Dynamic Amplifier. - Xiyuan Tang; Xiangxing Yang; Wenda Zhao; Chen-Kai Hsu; Jiaxin Liu; Linxiao Shen; Abhishek Mukherjee; Wei Shi 011; Shaolan Li; David Z. Pan; Nan Sun 001 (IEEE J. Solid State Circuits, 2020)

A 0.025-mm2 0.8-V 78.5-dB SNDR VCO-Based Sensor Readout Circuit in a Hybrid PLL- ΔΣ M Structure. - Wenda Zhao; Shaolan Li; Biying Xu; Xiangxing Yang; Xiyuan Tang; Linxiao Shen; Nanshu Lu; David Z. Pan; Nan Sun 001 (IEEE J. Solid State Circuits, 2020)

A 79dB-SNDR 167dB-FoM Bandpass ΔΣ ADC Combining N-Path Filter with Noise-Shaping SAR. - Linxiao Shen; Zijie Gao; Xiangxing Yang; Wei Shi 011; Nan Sun 001 (ISSCC, 2021)

10.4 A 3.7mW 12.5MHz 81dB-SNDR 4th-Order CTDSM with Single-OTA and 2nd-Order NS-SAR. - Wei Shi 011; Jiaxin Liu; Abhishek Mukherjee; Xiangxing Yang; Xiyuan Tang; Linxiao Shen; Wenda Zhao; Nan Sun 001 (ISSCC, 2021)

A 0.4-to-40MS/s 75.7dB-SNDR Fully Dynamic Event-Driven Pipelined ADC with 3-Stage Cascoded Floating Inverter Amplifier. - Xiyuan Tang; Xiangxing Yang; Jiaxin Liu; Wei Shi 011; David Z. Pan; Nan Sun 001 (ISSCC, 2021)

A 74.5-dB Dynamic Range 10-MHz BW CT-ΔΣ ADC With Distributed-Input VCO and Embedded Capacitive-π Network in 40-nm CMOS. - Abhishek Mukherjee; Miguel Gandara; Xiangxing Yang; Linxiao Shen; Xiyuan Tang; Chen-Kai Hsu; Nan Sun 001 (IEEE J. Solid State Circuits, 2021)

A Calibration-Free 15-level/Cell eDRAM Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC achieving 233-to-304-TOPS/W 4b MAC. - Jiahao Song; Xiyuan Tang; Haoyang Luo; Haoyi Zhang; Xin Qiao; Zixuan Sun; Xiangxing Yang; Yuan Wang 001; Runsheng Wang; Ru Huang 001 (CICC, 2023)

A Multi-Day Wearable Surface EMG E-Tattoo for Fatigue Monitoring. - Heeyong Huh; Xiangxing Yang; Hyonyoung Shin; Nanshu Lu (EMBC, 2023)

LeCA: In-Sensor Learned Compressive Acquisition for Efficient Machine Vision on the Edge. - Tianrui Ma; Adith Jagadish Boloor; Xiangxing Yang; Weidong Cao 001; Patrick Williams; Nan Sun 001; Ayan Chakrabarti; Xuan Zhang 001 (ISCA, 2023)

An In-Memory-Computing Charge-Domain Ternary CNN Classifier. - Xiangxing Yang; Keren Zhu 001; Xiyuan Tang; Meizhi Wang; Mingtao Zhan; Nanshu Lu; Jaydeep P. Kulkarni; David Z. Pan; Yongpan Liu; Nan Sun 001 (IEEE J. Solid State Circuits, 2023)

A Bandwidth-Adaptive Pipelined SAR ADC With Three-Stage Cascoded Floating Inverter Amplifier. - Xiyuan Tang; Xiangxing Yang; Jiaxin Liu; Zongnan Wang; Wei Shi 011; David Z. Pan; Nan Sun 001 (IEEE J. Solid State Circuits, 2023)

A 4-Bit Mixed-Signal MAC Macro With One-Shot ADC Conversion. - Xiangxing Yang; Nan Sun 001 (IEEE J. Solid State Circuits, 2023)

A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM. - Jiahao Song; Xiyuan Tang; Haoyang Luo; Haoyi Zhang; Xin Qiao; Zixuan Sun; Xiangxing Yang; Zihan Wu 005; Yuan Wang 001; Runsheng Wang; Ru Huang 001 (IEEE J. Solid State Circuits, 2024)