Modeling the temperature dependence of sheet and contact resistances in SiGe: C HBTs from 4.3 to 423 K. - Xiaodi Jin; Christoph Weimer; Yaxin Zhang; Michael Schröter (BCICTS, 2020)

Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing. - Hanbin Ying; Sunil G. Rao; Jeffrey W. Teng; Milad Frounchi; Markus Müller; Xiaodi Jin; Michael Schröter; John D. Cressler (BCICTS, 2020)

3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation. - Yaxin Zhang; Wenfeng Liang; Xiaodi Jin; Mario Krattenmacher; Sophia Falk; Paulius Sakalas; Bernd Heinemann; Michael Schröter (IEEE J. Solid State Circuits, 2020)

Thermal impedance of SiGe HBTs: Characterization and modeling. - Xiaodi Jin; Guangsheng Liang; Yves Zimmermann; Gerhard Fischer; Christoph Weimer; Mario Krattenmacher; Yaxin Zhang; Michael Schröter (BCICTS, 2022)

Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs. - Christoph Weimer; Xiaodi Jin; Gerhard G. Fischer; Michael Schröter (BCICTS, 2022)

On the Emitter Back-Injection Current in Advanced SiGe HBTs at Cryogenic Temperatures. - Xiaodi Jin; Prateek Kumar 006; Michael Schröter (BCICTS, 2024)

On the Safe Operating Area of InP HBTs. - Markus Müller; Sébastien Fregonese; Christoph Weimer; Guangsheng Liang; Xiaodi Jin; Maximilian Froitzheim; Thomas Zimmer; Michael Schröter (BCICTS, 2024)