Testing for Resistive Shorts in FPGA Interconnects. - Haixia Gao; Yintang Yang; Xiaohua Ma 001; Gang Dong (ISQED, 2005)

Analysis of the Effect of LUT Size on FPGA Area and Delay Using Theoretical Derivations. - Haixia Gao; Yintang Yang; Xiaohua Ma 001; Gang Dong (ISQED, 2005)

Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp. - Peng Zhang; Yuan Wang 001; Xing Zhang 002; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2014)

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress. - Wei-Wei Chen; Xiaohua Ma 001; Bin Hou; Sheng-Lei Zhao; Jiejie Zhu; Jincheng Zhang; Yue Hao 001 (Microelectron. Reliab., 2014)

The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT. - Minhan Mi; Yunlong He; Bin Hou; Meng Zhang; Zuo-Chen Shi; Xiaohua Ma 001; Peixian Li; Yue Hao 001 (IEICE Electron. Express, 2015)

A 5-8 GHz wideband 100 W internally matched GaN power amplifier. - Bochao Zhao; Xiaohua Ma 001; Yang Lu; Jiaxin Zheng; Wenzhe Han; Honghe Zhang; Yanlong Zhang; Yue Hao 001 (IEICE Electron. Express, 2015)

A novel graphical method for dual-frequency two sections transformer. - Bochao Zhao; Peijun Ma; Yang Lu; Jiaxin Zheng; Hengshuang Zhang; Zuo-Chen Shi; Xiaohua Ma 001; Yue Hao 001 (IEICE Electron. Express, 2016)

Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs. - Jiejie Zhu; Bin Hou; Lixiang Chen; Qing Zhu; Ling Yang 003; Xiaowei Zhou; Peng Zhang; Xiaohua Ma 001; Yue Hao 001 (IRPS, 2018)

Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress. - Yingzhe Wang; Xuefeng Zheng; Jiaduo Zhu; Shengrui Xu; Xiaohua Ma 001; Jincheng Zhang; Yue Hao 001; Linlin Xu; Jiangnan Dai; Peixian Li (IRPS, 2020)

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature. - Qing Zhu; Xiaohua Ma 001; Bin Hou; Mei Wu; Jiejie Zhu; Ling Yang 003; Meng Zhang; Yue Hao 001 (IEEE Access, 2020)

Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier. - Hao Lu 012; Xiaohua Ma 001; Bin Hou; Ling Yang 003; Teng Huo; Zeyan Si; Yue Hao 001 (ICTA, 2021)

Recent progress of integrated circuits and optoelectronic chips. - Yue Hao 001; Shuiying Xiang; Genquan Han; Jincheng Zhang; Xiaohua Ma 001; Zhangming Zhu; Xingxing Guo; Yahui Zhang; Yanan Han; Ziwei Song; Yan Liu; Ling Yang 003; et al. (Sci. China Inf. Sci., 2021)

First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications. - Hao Lu 012; Likun Zhou; Longge Deng; Ling Yang 003; Bin Hou; Xiaohua Ma 001; Yue Hao 001 (ICTA, 2022)

A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications. - Pengfei Wang; Minhan Mi; Sirui An; Xiang Du; Xiaohua Ma 001; Yue Hao 001 (ICTA, 2022)

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. - Siyu Liu; Xiaohua Ma 001; Jiejie Zhu; Minhan Mi; Jingshu Guo; Jielong Liu; Yilin Chen; Qing Zhu; Ling Yang 003; Yue Hao 001 (Sci. China Inf. Sci., 2022)

Hardware-algorithm collaborative computing with photonic spiking neuron chip based on integrated Fabry-Pérot laser with saturable absorber. - Shuiying Xiang; Yuechun Shi; Xingxing Guo; Yahui Zhang; Hongji Wang; Dianzhuang Zheng; Ziwei Song; Yanan Han; Shuang Gao; Shihao Zhao; Biling Gu; Hailing Wang; et al. (CoRR, 2022)

A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits. - Yuchen Wang; Xiaohua Ma 001; Yang Lu; Bochao Zhao; Ziyue Zhao; Chupeng Yi; Ling Yang 003; Jiangyi Shi; Yue Hao 001 (IEEE Trans. Instrum. Meas., 2022)

A Ka-band Wideband Power Synthesis Power Amplifier MMIC Utilizing Advanced 0.15μm GaN HEMT Technology. - Zhenkai Ding; Chupeng Yi; Yang Lu; Xiaohua Ma 001 (ICNCC, 2023)

Millimeter-Wave AlGaN/GaN MIS-HEMTs with Multiple T-Gate Technology. - Jielong Liu; Chang Wu; Tao Guo; Kai Wang; Chengcheng Li; An Liu; Rui Zhou; Zhen Huang; Jiayan Wu; Minhan Mi; Xiaohua Ma 001 (ICTA, 2023)

Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light. - Yilin Chen; Qing Zhu; Jiejie Zhu; Minhan Mi; Meng Zhang; Yuwei Zhou; Ziyue Zhao; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2023)

71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure. - Min Zhou; Hong Zhou; Mengwei Si; Guangjie Gao; Xiaojin Chen; Xiaoxiao Zhu; Kui Dang; Peijun Ma; Xiaohua Ma 001; Xuefeng Zheng; Zhihong Liu; Jincheng Zhang; et al. (VLSI Technology and Circuits, 2024)

A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness. - Sirui An; Minhan Mi; Pengfei Wang; Sijia Liu; Qing Zhu; Meng Zhang; Zhihong Chen; Jielong Liu; Siyin Guo; Can Gong; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2024)

High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. - Qingyuan Chang; Bin Hou; Ling Yang 003; Mei Wu; Meng Zhang; Hao Lu 012; Fuchun Jia; Xuerui Niu; Chunzhou Shi; Jiale Du; Mao Jia; Qian Yu; et al. (Sci. China Inf. Sci., 2024)

Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate. - Wen Hong; Chao Zhang; Fang Zhang; Xuefeng Zheng; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2024)

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. - Chunzhou Shi; Ling Yang 003; Meng Zhang; Hao Lu 012; Mei Wu; Bin Hou; Xuerui Niu; Qian Yu; Wenliang Liu 003; Wenze Gao; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2024)

Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias. - Qing Zhu; Zhenni Wang; Yuxiang Wei 006; Ling Yang 003; Xiaoli Lu; Jiejie Zhu; Peng Zhong; Yimin Lei; Xiaohua Ma 001 (Sci. China Inf. Sci., 2024)

Low-high-low doped Ga2O3 Schottky barrier IMPATT diodes on various crystal orientations for terahertz applications. - Xin-Yi Wang; Lin-An Yang; Xuan Huang; Jian-Hua Zhou; Xiao-Hua Ma 001; Yue Hao 001 (Microelectron. J., 2024)

Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures. - Yahui Feng; Hongxia Guo; Wuying Ma; Jiawen Hu; Xiaoping Ouyang 003; Jinxin Zhang; Fengqi Zhang; Hong Zhang; Ruxue Bai; Xiaohua Ma 001; Yue Hao 001 (Microelectron. J., 2024)

High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure. - Can Gong; Minhan Mi; Yuwei Zhou; Pengfei Wang; Hanzhen Li; Xinyi Wen; Ting Meng; Sirui An; Xiang Du; Kai Cheng; Meng Zhang; Qing Zhu; et al. (Sci. China Inf. Sci., 2025)

Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT. - Mao Jia; Bin Hou; Ling Yang 003; Meng Zhang; Mei Wu; Hao Lu 012; Xitong Hong; Zhiqiang Xue; Jiale Du; Qingyuan Chang; Qian Xiao; Xiaohua Ma 001; et al. (Sci. China Inf. Sci., 2025)

Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax × LG. - Lingjie Qin; Jiejie Zhu; Bowen Zhang; Yuxi Zhou; Huantao Duan; Huimei Ma; Mengdi Li; Simei Huang; Jin Rao; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2025)

Physics based circuit compatible model for hybrid antiferroelectric random access memory. - Qiuxia Wu; Yue Peng; Wenwu Xiao; Wenxuan Ma 008; Shuo Zhang; Litao Sun; Chunfu Zhang; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2025)

Class-F-1 GaN Power Amplifier Integrated Active Antenna With Increased Efficiency for Wireless Power Transmission Applications. - Wen-Liang Liu 003; Jing-Ya Deng; Chupeng Yi; Zi-Yue Zhao; Ting Feng; Xin Liu 063; Yang Lu; Xiao-Hua Ma 001; Yue Hao 001 (IEEE Internet Things J., 2025)

A comprehensive study on the electrical effects of avalanche region on GaN Schottky barrier IMPATT diodes through injection phases. - Xuan Huang; Lin-An Yang; Jian-Hua Zhou; Xin-Yi Wang; Dong-Liang Chen; Xiaohua Ma 001; Yue Hao 001 (Microelectron. J., 2025)

Study of GaN Schottky barrier IMPATT diodes with a self-aligned field plate for terahertz applications. - Xuan Huang; Lin-An Yang; Jian-Hua Zhou; Xin-Yi Wang; Xiao-Hua Ma 001; Yue Hao 001 (Microelectron. J., 2025)

Linearization of Fully-Connected Hybrid Beamforming Transmitters Using Analytical Multi-Input Models for Millimeter-Wave Communications. - Xin Liu 063; Huanhuan Jia; Yang Lu; Ziyue Zhao; Chupeng Yi; Ting Feng; Xiaohua Ma 001; Wenhua Chen 002; Zhenghe Feng; Fadhel M. Ghannouchi (IEEE Trans. Commun., 2025)

A Novel Transform Accelerator With Fast Kernel Selection and Efficient Transform Circuit. - Zhijian Hao; Chenlong He; Jiaming Liu; Qi Zheng 004; Jinchang Xu; Peijun Ma; Xiaohua Ma 001; Yue Hao 001 (IEEE Trans. Circuits Syst. I Regul. Pap., 2025)