BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application. - Leming Jiao; Zuopu Zhou; Zijie Zheng; Yuye Kang; Chen Sun 010; Qiwen Kong; Xiaolin Wang 007; Dong Zhang; Gan Liu; Long Liu; Xiao Gong (ICICDT, 2022)

Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection. - Zijie Zheng; Chen Sun 010; Leming Jiao; Dong Zhang; Zuopu Zhou; Xiaolin Wang 007; Gan Liu; Qiwen Kong; Yue Chen; Kai Ni 004; Xiao Gong (VLSI Technology and Circuits, 2022)

First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory. - Zijie Zheng; Jiawei Xie; Yiyuan Sun; Ying Xu; Xiaolin Wang 007; Leming Jiao; Zuopu Zhou; Qiwen Kong; Yue Chen; Xiao Gong (ICICDT, 2023)

First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices. - Leming Jiao; Kaizhen Han; Zuopu Zhou; Zijie Zheng; Xiaolin Wang 007; Qiwen Kong; Yuye Kang; Jishen Zhang; Long Liu; Xiao Gong (VLSI Technology and Circuits, 2023)

First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×109 Endurance, and 58.3% Area Saving. - Xiaolin Wang 007; Zijie Zheng; Qiwen Kong; Leming Jiao; Kaizhen Han; Chen Sun 010; Zuopu Zhou; Long Liu; Yuye Kang; Gan Liu; Dong Zhang; Xiao Gong (VLSI Technology and Circuits, 2023)

Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding. - Dong Zhang; Jixuan Wu; Qiwen Kong; Zuopu Zhou; Long Liu; Kaizhen Han; Chen Sun 010; Xiaolin Wang 007; Gan Liu; Leming Jiao; Zijie Zheng; Yuye Kang; et al. (VLSI Technology and Circuits, 2023)

First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs. - Zijie Zheng; Leming Jiao; Zuopu Zhou; Yuxuan Wang; Long Liu; Kaizhen Han; Chen Sun 010; Qiwen Kong; Dong Zhang; Xiaolin Wang 007; Kai Ni 004; Xiao Gong (VLSI Technology and Circuits, 2023)

First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack. - Zuopu Zhou; Leming Jiao; Zijie Zheng; Xiaolin Wang 007; Dong Zhang; Kai Ni 004; Xiao Gong (VLSI Technology and Circuits, 2023)

Transposable Memory Based on the Ferroelectric Field-Effect Transistor. - Jianze Wang; Wei Zhang; Zhen Wu; Yimin Wang 001; Leming Jiao; Xiaolin Wang 007; Xiao Gong; Xuanyao Fong (ISCAS, 2024)

Unveiling the Impact of AC PBTI on Hydrogen Formation in Oxide Semiconductor Transistors. - Gan Liu; Qiwen Kong; Zuopu Zhou; X. Ying; Chen Sun 010; Kaizhen Han; Yuye Kang; Dong Zhang; Xiaolin Wang 007; Yang Feng; Wei Shi; Bich-Yen Nguyen; et al. (VLSI Technology and Circuits, 2024)