Novel High voltage silicon-on-insulator Device with Composite dielectric buried Layer. - Jie Fan; Xiaorong Luo; Bo Zhang 027; Zhaoji Li (J. Circuits Syst. Comput., 2013)

Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer. - Jiayun Xiong; Chao Yang 033; Jie Wei; Junfeng Wu; Bo Zhang 027; Xiaorong Luo (Sci. China Inf. Sci., 2016)

Ultralow power loss integratable high-voltage MOSFETs. - Xiaorong Luo; Weiwei Ge; Bo Zhang 027 (ASICON, 2017)

High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels. - Chao Yang 033; Xiaorong Luo; Siyu Deng; Fu Peng; Bo Zhang 027 (Sci. China Inf. Sci., 2018)

Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers. - Fu Peng; Chao Yang 033; Siyu Deng; Dongya Ouyang; Bo Zhang 027; Jie Wei; Xiaorong Luo (Sci. China Inf. Sci., 2019)

TOC determination of Zhangjiatan shale of Yanchang formation, Ordos Basin, China, using support vector regression and well logs. - Xin Liu; Yuhong Lei; Xiaorong Luo; Xiangzeng Wang; Kaiyuan Chen; Ming Cheng; Jintao Yin (Earth Sci. Informatics, 2021)

Sign-changing solutions to the critical Choquard equation. - Xiaorong Luo; Anmin Mao (Appl. Math. Lett., 2022)

Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate. - Xiaorong Luo; Junyue Huang; Xu Song; Qinfeng Jiang; Jie Wei; Jian Fang; Fei Yang (Sci. China Inf. Sci., 2022)

High voltage GaN vertical FinFET with a compatible integrated fin diode for low reverse conduction loss. - Zhijia Zhao 005; Yuxi Wei; Tao Sun 017; Kemeng Yang; Jie Wei; Yanjiang Jia; Siyu Deng; Xiaorong Luo; Bo Zhang 027 (Microelectron. J., 2023)

High breakdown voltage β-Ga2O3 Schottky barrier diode with fluorine-implanted termination. - Xiaorong Luo; Linyao Hao; Yuxi Wei; Kaiwei Dai; Xiaosong Peng; Zhuolin Jiang; Yuxin Wu (Microelectron. J., 2024)

Novel high-voltage GaN CAVET with high threshold voltage and low reverse conduction loss. - Chengtao Luo; Cheng Yang; Zhijia Zhao 005; Xintong Xie; Yuxi Wei; Jie Wei; Jingyu Shen; Jinpeng Qiu; Xiaorong Luo (Microelectron. J., 2024)

Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode. - Xintong Xie; Shuxiang Sun; Zhijia Zhao 005; Pengfei Zhang; Jie Wei; Xin Zhou; Jingyu Shen; Jinpeng Qiu; Xiaorong Luo (Microelectron. J., 2024)