The influence of the N+ floating layer on the drift doping of RESURF LDMOS and its analytical model. - Xiarong Hu; Weibo Wang; Yupin Ji; Qing Hua (IEICE Electron. Express, 2016)

1.2 kV 4H-SiC planar power MOSFETs with a low-K dielectric in central gate. - Dong Liu; Mingyue Li; Yangjie Ou; Zhong Lan; Maosen Tang; Weibo Wang; Xiarong Hu (IET Circuits Devices Syst., 2022)