A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28 nm node. - Xinggong Wan; Sandhya Chandrashekhar; Boris Bayha; Martin Trentzsch; Torben Balzer; Mahesh Siddabathula; Oliver Aubel (Microelectron. Reliab., 2014)

Voltage Ramp Stress Test Optimization for Wafer Level Hot Carrier Monitoring in FinFET. - Ri-an Zhao; Matthew Koskinen; Yang Liu; Xinggong Wan (IRPS, 2023)

Monolithically Integrated High-Performance Ge-on-Si PIN Photodetectors with Nearly 60 GHz EO Bandwidth, 0.95 A/W Responsivity, <30 nA Dark Current and -36 dB Optical Return Loss Enabled by Ge Shape Optimization. - Yusheng Bian; Abdelsalam Aboketaf; Won Suk Lee; Sujith Chandran; Edgar Huante-Ceron; Arman Najafi; Ana Villafranca; Hatef Shiran; Judson Holt; Francis Afzal; Kevin K. Dezfulian; Michelle Zhang; et al. (OFC, 2025)