Effects of random MOSFET parameter fluctuations on total power consumption. - Xinghai Tang; Vivek De; James D. Meindl (ISLPED, 1996)

Intrinsic MOSFET parameter fluctuations due to random dopant placement. - Xinghai Tang; Vivek De; James D. Meindl (IEEE Trans. Very Large Scale Integr. Syst., 1997)

A physical alpha-power law MOSFET model. - Keith A. Bowman; Blanca Austin; John C. Eble; Xinghai Tang; James D. Meindl (IEEE J. Solid State Circuits, 1999)

Impact of extrinsic and intrinsic parameter fluctuations on CMOS circuit performance. - Keith A. Bowman; Xinghai Tang; John C. Eble; James D. Menldl (IEEE J. Solid State Circuits, 2000)

The impact of intrinsic device fluctuations on CMOS SRAM cell stability. - Azeez J. Bhavnagarwala; Xinghai Tang; James D. Meindl (IEEE J. Solid State Circuits, 2001)