A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate. - Chao Xia; Xinhong Cheng; Zhongjian Wang; Duo Cao; Tingting Jia; Li Zheng; Yuehui Yu; Dashen Shen (Microelectron. Reliab., 2014)

A high voltage multiplexer with rail to rail output swing for battery management system applications. - Xinchang Li; Dawei Xu; Hongyue Zhu; Zhuojun Chen; Zhiqiang Yang; Xinhong Cheng; Yuehui Yu; Wai Tung Ng (IEICE Electron. Express, 2017)

A high voltage multiplexer with rail to rail output swing for battery management system applications [IEICE Electronics Express Vol. 14(2017) No. 1 pp. 20161144]. - Xinchang Li; Dawei Xu; Hongyue Zhu; Zhuojun Chen; Zhiqiang Yang; Xinhong Cheng; Yuehui Yu; Wai Tung Ng (IEICE Electron. Express, 2018)

An improved noise immune level-shifter via IGBT gate-emitter voltage detection. - Hongyue Zhu; Dawei Xu; Xinchang Li; Chao Xu; Dengpeng Wu; Xinhong Cheng; XiaoYun Li (IEICE Electron. Express, 2018)

An improved noise immune level-shifter via IGBT gate-emitter voltage detection [IEICE Electronics Express Vol. 15(2018) No. 9 pp. 20180293]. - Hongyue Zhu; Dawei Xu; Xinchang Li; Chao Xu; Dengpeng Wu; Xinhong Cheng; XiaoYun Li (IEICE Electron. Express, 2018)

A self-adaptive blanking time circuit for fast IGBT de-saturation short-circuit protection. - Hongyue Zhu; Xinhong Cheng; Yifei Xia; Dawei Xu; Tiantian Liu; Zhenwei Zhang (IEICE Electron. Express, 2020)

A short circuit protection circuit for SiC MOSFET with self-adjustive blanking time. - Tiantian Liu; Yuhua Quan; Xuetong Zhou; Yufei Tian; Xinhong Cheng; Xiaoyi Huang (IEICE Electron. Express, 2021)

A Self-Adaptive Measurement System for IGBT Collector Current Using Package Parasitics. - Hongyue Zhu; Xinhong Cheng; Wai Tung Ng; Dawei Xu; Xinchang Li; Yifei Xia (IEEE Trans. Ind. Electron., 2021)

A dV/dt noise canceling circuit of capacitive-isolated gate drivers. - Xuefei Zhang; Tiantian Liu; Yuhua Quan; Xiaoyi Huang; Xinhong Cheng; Yuehui Yu (IEICE Electron. Express, 2022)

A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability. - Lingyan Shen; Xinhong Cheng; Li Zheng; Yuehui Yu (DRC, 2023)

A fin-gate p-GaN HEMT with high threshold voltage and improved dynamic performance. - Lingyan Shen; Xuetong Zhou; Li Zheng; Xinhong Cheng (Microelectron. J., 2024)