The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode. - Jie Cao; Yu Wu 015; Yueyang Liu; Xintian Zhou; Lihao Wang; Meng Liu; Lei Sun (EITCE, 2020)

Superior Static Electrical Characteristics of a 650-V 4H-SiC Accumulation-Mode MOS Channel Diode. - Meng Liu; Yu Wu 015; Xintian Zhou; Jie Cao; Lei Sun; Lihao Wang (EITCE, 2020)

Electrical Parameters Degradation of E-mode GaN Under Repeated Short-Circuit Impacts. - Lei Sun; Dongqing Hu; Xintian Zhou; Meng Liu; Jie Cao (EITCE, 2020)

Architecture-level Radiation-Hardened design applied to halfbridge GaN driver. - Yue Tan; Yunpeng Jia; Xintian Zhou; Yuanfu Zhao; Fujie Zhao; Xinyu Li; Jinpeng Zhou (EITCE, 2020)

A Novel Reverse-Conducting IGBT With Built-In Channel Diode. - Xingyu Fang; Yunpeng Jia; Xintian Zhou; Xinyu Li; Yingying Lei; Kai Zhao (EITCE, 2021)

Investigation of 4500 V FRD Implanted from Cathode with Different Depths Using 1-D Varied Doping. - Chen Gao; Yu Wu 015; Yueyang Liu; Xintian Zhou; Kesheng Wang; Zheng Zhong (EITCE, 2021)

Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET. - Yingying Lei; Yu Wu 015; Xintian Zhou; Meng Liu; Xinyu Li; Xingyu Fang; Kai Zhao; Zheng Zhong (EITCE, 2021)

3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET. - Ting Li; Dongqing Hu; Yunpeng Jia; Xintian Zhou; Yu Wu 015 (EITCE, 2021)

Study on The Degradations Produced by Different P-base Diffusion Temperatures on SGT MOSFET With Approximate Threshold Voltage. - Xinyu Li; Yunpeng Jia; Xintian Zhou; Yuanfu Zhao; Xingyu Fang; Zhonghan Deng (EITCE, 2021)

High voltage CIBH diodes with new structure on the cathode side of the edge. - Lihao Wang; Xintian Zhou; Feng Liu; Lei Zhang; Yu Wu 015; Xinyu Li (EITCE, 2021)

Investigation of Anti-SEB Capability of 160 V Power MOSFET Device with Multiple Buffer Layer. - Wanting Yang; Dongqing Hu; Xintian Zhou; Xinyu Li; Xingyu Fang; Kai Zhao (EITCE, 2021)

The Reverse Recovery Characteristics of an Improved 3.3-kV CIBH Diode with Local Heavily Doped N++ Regions at the Cathode. - Kai Zhao; Yu Wu 015; Yueyang Liu; Xintian Zhou; Zhaomin Yao; Yingying Lei (EITCE, 2021)

Anti-total dose effect design of half-bridge driving chip. - Jinpeng Zhou; Yunpeng Jia; Xintian Zhou; Yuanfu Zhao; Yue Tan; Xinyu Li (EITCE, 2021)

A 4H-SiC Trench MOSFET with the vertical field plate coupled floating island and two epi-layers. - Wangda Wang; Dongqing Hu; Xintian Zhou; Yunpeng Jia; Yu Wu 015 (EITCE, 2022)

Design and Simulation of 1.2kV Semi-Super Junction FRD with Vertical Variation Doping. - Yuefeng Wu; Yu Wu 015; Xintian Zhou; Feng Liu; Lei Zong (EITCE, 2022)

Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region. - Chongning Zhao; Dongqing Hu; Yuechao Zheng; Yunpeng Jia; Xintian Zhou; Yu Wu 015; Ting Li (EITCE, 2022)

Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection. - Yuechao Zheng; Dongqing Hu; Chongning Zhao; Yunpeng Jia; Xintian Zhou; Yu Wu 015; Ting Li (EITCE, 2022)

Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure. - Kang Zhang; Yu Wu 015; Dongqing Hu; Yunpeng Jia; Xintian Zhou (EITCE, 2023)

Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension. - Shiyu Zhang; Dongqing Hu; Xintian Zhou; Yunpeng Jia; Yu Wu 015 (EITCE, 2023)

An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier. - Xintian Zhou; Jinglong Yan; Yun Tang; Dongqing Hu; Yu Wu 015; Yunpeng Jia; Bodian Li; Yuanfu Zhao (IEEE Access, 2025)

A simulation study of SiC trench JFET with embedded diode for performance improvement. - Shida Zhang; Xintian Zhou; Yun Tang; Yunpeng Jia; Dongqing Hu; Yu Wu 015; Yuanfu Zhao (Microelectron. J., 2025)