A 40nm 4Mb High-Reliability STT-MRAM Achieving 18ns Write-Time and 94.9% Wafer-Level-Die-Yield Across -55°C-to-125°C. - Yaoru Hou; Haoran Du; Jiongzhe Su; Yibo Liu; Zhenghan Fang; Jia-Le Cui; Shuyu Wang; Chenxing Liu-Sun; Xuezhao Wu; Zhihua Xiao; Bo Liu 019; Xin Si; et al. (CICC, 2025)