Hybrid Integration of 3D-RF Interconnects on AlGaN/GaN/Si HEMT RF Transistor featuring 2.2W/mm Psat & 41% PAE @28GHz using a Robust and Cost-Effective Chiplet Heterogeneous Bonding Technique. - A. Divay; Olivier Valorge; Christophe Dubarry; M. Medbouhi; Rémi Franiatte; Daniel Mermin; R. Velard; Y. Gobil; F. Morisot; Erwan Morvan; Ismael Charlet; Luca Lucci; et al. (VLSI Technology and Circuits, 2024)