Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors. - Y. Hernandez-Barrios; F. Avila-Herrera; Magali Estrada; Antonio Cerdeira; Oana Moldovan; Benjamín Iñíguez; Rodrigo Picos (CCE, 2016)