Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. - Marc Aoulaiche; Eddy Simoen; Romain Ritzenthaler; Tom Schram; Hiroaki Arimura; Moonju Cho; Thomas Kauerauf; Guido Groeseneken; Naoto Horiguchi; Aaron Thean; Antonio Federico; Felice Crupi; et al. (ESSDERC, 2013)

I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration. - Romain Ritzenthaler; Tom Schram; M. J. Cho; Anda Mocuta; Naoto Horiguchi; Aaron Voon-Yew Thean; Alessio Spessot; Christian Caillat; Marc Aoulaiche; Pierre Fazan; K. B. Noh; Y. Son (ICICDT, 2015)

Assessment of SiGe quantum well transistors for DRAM peripheral applications. - Romain Ritzenthaler; Tom Schram; Geert Eneman; Anda Mocuta; Naoto Horiguchi; Aaron Voon-Yew Thean; Alessio Spessot; Marc Aoulaiche; Pierre Fazan; K. B. Noh; Y. Son (ICICDT, 2015)

A practical iterative PID tuning method for mechanical systems using parameter chart. - M. Kang; Joono Cheong; Hyunmin Do; Y. Son; Silviu-Iulian Niculescu (Int. J. Syst. Sci., 2017)