Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs. - Shuang Liu; Xiufeng Song; Jincheng Zhang; Sheng-Lei Zhao; Jun Luo; Hong Zhang; Yachao Zhang 002; Weihang Zhang; Hong Zhou; Zhihong Liu; Yue Hao 001 (IEEE Access, 2020)

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3 Gate Dielectrics. - Kai Su; Zeyang Ren; Yue Peng; Jinfeng Zhang; Jincheng Zhang; Yachao Zhang 002; Qi He; Chunfu Zhang; Yue Hao 001 (IEEE Access, 2020)

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration. - Kui Dang; Jincheng Zhang; Hong Zhou; Shan Yin; Tao Zhang 090; Jing Ning; Yachao Zhang 002; Zhaoke Bian; Jiabo Chen; Xiaoling Duan; Sheng-Lei Zhao; Yue Hao 001 (IEEE Trans. Ind. Electron., 2020)

1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate. - Sheng-Lei Zhao; Jincheng Zhang; Yachao Zhang 002; Lansheng Feng; Shuang Liu; Xiufeng Song; Yixin Yao; Jun Luo; Zhihong Liu; Shengrui Xu; Yue Hao 001 (Sci. China Inf. Sci., 2023)

Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability. - Kui Dang; Zhilin Qiu; Shudong Huo; Peng Zhan; Huining Liu; Yachao Zhang 002; Jing Ning; Hong Zhou; Jincheng Zhang (Sci. China Inf. Sci., 2024)

High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz. - Hanghai Du; Lu Hao; Zhihong Liu; Zeyu Song; Yachao Zhang 002; Kui Dang; Jin Zhou; Jing Ning; Zan Li; Jincheng Zhang; Yue Hao 001 (Sci. China Inf. Sci., 2024)