9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device. - Mengxiao Lian; Yian Yin; Jialin Li; Bingzhi Zou; Keming Zhang; Xichen Zhang; Yafang Xie; You Wu; Zhixiang Zhang (Microelectron. J., 2023)